MEASUREMENT OF THE TRANSPORT PROPERTIES OF INGANGAN HETEROSTRUCTURE ANALYZED USING A TWO-LAYER MODEL

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dc.contributorLMOPS, Universiti Sains Malaysia
dc.contributor.authorYusof, Ahmad Sauffi
dc.contributor.authorOuld Saad Hamady, Sidi
dc.contributor.authorChevallier, Christyves
dc.contributor.authorFressengeas, Nicolas
dc.contributor.authorHassan, Zainuriah et al
dc.date.accessioned2023-04-05T01:41:04Z
dc.date.available2023-04-05T01:41:04Z
dc.date.issued6/16/2022
dc.descriptionThis dataset includes transport measurements data of InGaN epilayer grown by MOCVD on a semiconducting GaN template substrate. This dataset was used in the article published in Materials Science in Semiconductor Processing (https://doi.org/10.1016/j.mssp.2022.106614). A two layer model was used to precisely extract the electrical properties of the InGaN epilayers, as developed in the article. The Python code used to plot and analyze the experimental data is included alongside with the data. Are also included the X-ray diffraction and photoluminescence data.
dc.identifier.doi10.12763/QXFWRQ
dc.identifier.urihttps://opendata.usm.my/handle/123456789/74625
dc.rightsCC0 1.0 Universal*
dc.rights.urihttp://creativecommons.org/publicdomain/zero/1.0/*
dc.subjectPhysics
dc.titleMEASUREMENT OF THE TRANSPORT PROPERTIES OF INGANGAN HETEROSTRUCTURE ANALYZED USING A TWO-LAYER MODEL
dc.typeDataset
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Physics, Engineering and Material Science