MEASUREMENT OF THE TRANSPORT PROPERTIES OF INGANGAN HETEROSTRUCTURE ANALYZED USING A TWO-LAYER MODEL
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Date
6/16/2022
Authors
Yusof, Ahmad Sauffi
Ould Saad Hamady, Sidi
Chevallier, Christyves
Fressengeas, Nicolas
Hassan, Zainuriah et al
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Abstract
Description
This dataset includes transport measurements data of InGaN epilayer grown by MOCVD on a semiconducting GaN template substrate. This dataset was used in the article published in Materials Science in Semiconductor Processing (https://doi.org/10.1016/j.mssp.2022.106614). A two layer model was used to precisely extract the electrical properties of the InGaN epilayers, as developed in the article. The Python code used to plot and analyze the experimental data is included alongside with the data. Are also included the X-ray diffraction and photoluminescence data.
Keywords
Physics